Boron phosphide

Summary

Boron phosphide
Boron-phosphide-unit-cell-1963-CM-3D-balls.png
Identifiers
  • 20205-91-8 checkY
3D model (JSmol)
  • Interactive image
  • Interactive image
ECHA InfoCard 100.039.616 Edit this at Wikidata
  • 88409
  • DTXSID1066570 Edit this at Wikidata
  • [B+3].[P-3]
  • B#P
Properties
BP
Molar mass 41.7855 g/mol
Appearance maroon powder
Density 2.90 g/cm3
Melting point 1,100 °C (2,010 °F; 1,370 K) (decomposes)
Band gap 2.1 eV (indirect, 300 K)[1]
Thermal conductivity 4.6 W/(cm·K) (300 K)[2]
3.0 (0.63 µm)[1]
Structure
Zinc blende
F43m
Tetrahedral
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B12P2) is a chemical compound of boron and phosphorus. It is a semiconductor.[3]

History

Crystals of boron phosphide were synthesized by Henri Moissan as early as in 1891.[4]

Appearance

Pure BP is almost transparent, n-type crystals are orange-red whereas p-type ones are dark red.[5]

Chemical properties

BP is not attacked by acids or boiling aqueous alkali water solutions. It is only attacked by molten alkalis.[5]

Physical properties

BP is known as a material to be chemically refractive and have a very high thermal conductivity.[2] Some properties of BP are listed below:

  • lattice constant 0.45383 nm
  • coefficient of thermal expansion 3.65×10−6 /°C (400 K)
  • heat capacity CP ~ 0.8 J/(g·K) (300 K)
  • Debye temperature = 985 K
  • Bulk modulus 152 GPa
  • relatively high microhardness of 32 GPa (100 g load).
  • electron and hole mobilities of a few hundred cm2/(V·s) (up to 500 for holes at 300 K)
  • high thermal conductivity of ~ 460 W/mK at room temperature[2]

See also

References

  1. ^ a b Madelung, O. (2004). Semiconductors: Data Handbook. Birkhäuser. pp. 84–86. ISBN 978-3-540-40488-0.
  2. ^ a b c Kang, J.; Wu, H.; Hu, Y. (2017). "Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications". Nano Letters. 17: 7507. doi:10.1021/acs.nanolett.7b03437. PMID 29115845.
  3. ^ Popper, P.; Ingles, T. A. (1957). "Boron Phosphide, a III–V Compound of Zinc-Blende Structure". Nature. 179: 1075. doi:10.1038/1791075a0.
  4. ^ Moissan, H. (1891). "Préparation et Propriétés des Phosphures de Bore". Comptes Rendus. 113: 726–729.
  5. ^ a b Berger, L. I. (1996). Semiconductor Materials. CRC Press. p. 116. ISBN 978-0-8493-8912-2. ISBN 0849389127.

Further reading

  • King, R. B., ed. (1999). Boron Chemistry at the Millennium. Elsevier Science & Technology. ISBN 0-444-72006-5.
  • US patent 6831304, Takashi, U., "P-N Junction Type Boron Phosphide-Based Semiconductor Light-Emitting Device and Production Method thereof", issued 2004-12-14, assigned to Showa Denko 
  • Stone, B.; Hill, D. (1960). "Semiconducting Properties of Cubic Boron Phosphide". Physical Review Letters. 4 (6): 282–284. Bibcode:1960PhRvL...4..282S. doi:10.1103/PhysRevLett.4.282.