Diazonaphthoquinone (DNQ) is a diazo derivative of naphthoquinone. Upon exposure to light, DNQ converts to a derivative that is susceptible to etching. In this way, DNQ has become an important reagent in photoresist technology in the semiconductor industry.[1]
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Preferred IUPAC name
2-Diazonaphthalen-1(2H)-one | |
Other names
1,2-Naphthoquinone diazide
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Properties | |
C10H6N2O | |
Molar mass | 170.171 g·mol−1 |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Diazonaphthoquinone sulfonic acid esters are components of common photoresist materials. Such photoresists are used in the manufacture of semiconductors.[2][3][4] In this application DNQs are mixed with Novolac resin, a type of phenolic polymer. The DNQ functions as a dissolution inhibitor. During the masking/patterning process, portions of the photoresist film are exposed to light while others remain unexposed. In the unexposed regions of the resist film, the DNQ acts as a dissolution inhibitor and the resist remains insoluble in the aqueous base developer. In the exposed regions, the DNQ forms a ketene, which, in turn, reacts with ambient water to form a base soluble indene carboxylic acid. The exposed regions of the photoresist film become soluble in aqueous base; thus allowing the formation of a relief image during development.
Upon photolysis, DNQ undergoes a Wolff rearrangement to form a ketene. The ketene adds water to form indene-carboxylic acid.[5]