Light-emitting transistor


A light-emitting transistor or LET is a form of transistor that emits light. Higher efficiency than light-emitting diode (LED) is possible.

Light-emitting transistor (LET)
Working principleElectroluminescence
InventedMilton Feng Nick Holonyak


Reported in the January 5, 2004 issue of the journal Applied Physics Letters, Milton Feng and Nick Holonyak,[1] the inventor of the first practical light-emitting diode (LED) and the first semiconductor laser to operate in the visible spectrum, made the world's first light-emitting transistor. This hybrid device, fabricated by Feng's graduate student Walid Hafez, had one electrical input and two outputs (electrical output and optical output) and operated at a frequency of 1 MHz. The device was made of indium gallium phosphide, indium gallium arsenide, and gallium arsenide, and emitted infrared photons from the base layer.[2][3]

See also


  1. ^ Feng et al, Appl. Phys. Lett. 84, 151 (2004)
  2. ^ First Light-Emitting Transistor
  3. ^ New light-emitting transistor could revolutionize electronics industry