Nickel monosilicide is an intermetallic compound formed out of nickel and silicon. Like other nickel silicides, NiSi is of importance in the area of microelectronics.
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3D model (JSmol)
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ChemSpider |
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PubChem CID
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CompTox Dashboard (EPA)
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Properties | |
NiSi | |
Molar mass | 86.778 g/mol |
Melting point | 1,000 °C; 1,832 °F; 1,273 K[2] |
−0.3×10−6 emu/g[1] | |
Structure[3] | |
Orthorhombic, oP8 | |
Pnma, No. 62 | |
a = 0.519 nm, b = 0.333 nm, c = 0.5628 nm
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Formula units (Z)
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4 |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Nickel monosilicide can be prepared by depositing a nickel layer on silicon and subsequent annealing. In the case of Ni films with thicknesses above 4 nm, the normal phase transition is given by Ni2Si at 250 °C followed by NiSi at 350 °C and NiSi2 at approximately 800 °C.[4] For films with an initial Ni thickness below 4 nm a direct transition from orthorhombic Ni2Si to epitaxial NiSi2−x, skipping the nickel monosilicide phase, is observed.[5]
Several properties make NiSi an important local contact material in the area of microelectronics, among them a reduced thermal budget, low resistivity of 13–14 μΩ·cm and a reduced Si consumption when compared to alternative compounds.[6]