Read-mostly memory (RMM) is a type of memory that can be read fast, but written to only slowly.
Historically, the term was used to refer to different types of memory over time:
In 1970, it was used by Intel and Energy Conversion Devices to refer to a new type of amorphous and crystalline nonvolatile and reprogrammable semiconductor memory (phase-change memory aka PCM/PRAM).[1][2] However, it was also used to refer to reprogrammable memory (REPROM)[3] and magnetic-core memory.[4]
The term has mostly fallen into disuse, but is sometimes used referring to electrically erasable programmable read-only (EEPROM) or flash memory today.[5]
[…] RMM (Read mostly memory) oder REPROM (Reprogrammable memory): Semifestspeicher, bei denen das Schreiben möglich, jedoch wesentlich aufwendiger als das Lesen ist (meist um einige Zehnerpotenzen). […](xii+278+2 pages)
[…] Honeywell H4200 […] 1966 […] Kernspeicher […] 2 Kerne/Bit […] RMM: Read-mostly-Memory, d.h. Speicher mit langsame[m] Schreiben, aber schnellem Lesen […](320 pages)