Rzhanov Institute of Semiconductor Physics

Summary

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS (Russian: Институт физики полупроводников имени А. В. Ржанова СО РАН) is a research institute in Akademgorodok of Novosibirsk, Russia. It was founded in 1964.

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
Институт физики полупроводников им. А. В. Ржанова.jpg
Founder(s)Anatoly Rzhanov
Established1964
DirectorAlexander Latyshev
OwnerSiberian Branch of the Russian Academy of Sciences
AddressLavrentyev Prospekt 13, Novosibirsk, 630090, Russia
Location,
Websitewww.isp.nsc.ru

HistoryEdit

The institute was created in 1964 by merging the Institute of Solid State Physics and Semiconductor Electronics and the Institute of Radiophysics and Electronics.[1]

In the 1970s, the institute began to work on developing molecular-beam epitaxy methods.[1]

Scientific activityEdit

Development of the physical fundamentals of microelectronics, acousto-electronics, microphotoelectronics, quantum electronics; the study of physical phenomena in semiconductor thin-film structures etc.[2]

ReferencesEdit

  1. ^ a b From electron to photon: ISP SB RAS is 55 years old. Novosti Sibirskoy Nauki. От электрона к фотону: ИФП СО РАН — 55 лет. Новости сибирской науки. May 14, 2019.
  2. ^ Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS. Siberian Branch of the Russian Academy of Sciences.